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Freescale Semiconductor Technical Data
Document Number: MMG3012NT1 Rev. 5, 3/2008
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3012NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF. Features * Frequency: 0 - 6000 MHz * P1dB: 18.5 dBm @ 900 MHz * Small - Signal Gain: 19 dB @ 900 MHz * Third Order Output Intercept Point: 34 dBm @ 900 MHz * Single 5 Volt Supply * Internally Matched to 50 Ohms * Low Cost SOT - 89 Surface Mount Package * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MMG3012NT1
0 - 6000 MHz, 19 dB 18.5 dBM InGaP HBT
12
3
CASE 1514 - 02, STYLE 1 SOT - 89 PLASTIC
Table 1. Typical Performance (1)
Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @1dB Compression Third Order Output Intercept Point Symbol Gp IRL ORL P1db IP3 900 MHz 19 - 18 - 18 18.5 34 2140 MHz 15.8 - 20 - 12 19 32 3500 MHz 13.4 - 17 - 16 18 31 Unit dB dB dB dBm dBm
Table 2. Maximum Ratings
Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature (2) Symbol VCC ICC Pin Tstg TJ Value 7 300 10 - 65 to +150 150 Unit V mA dBm C C
2. For reliable operation, the junction temperature should not exceed 150C.
1. VCC = 5 Vdc, TC = 25C, 50 ohm system
Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 70 mA, TC = 25C)
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (3) 85 Unit C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
MMG3012NT1 1
RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25C, 50 ohm system, in Freescale Application Circuit)
Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure Supply Current (1) Supply Voltage (1) Symbol Gp IRL ORL P1dB IP3 NF ICC VCC Min 17.5 -- -- -- -- -- 58 -- Typ 19 - 18 - 18 18.5 34 3.8 70 5 Max -- -- -- -- -- -- 82 -- Unit dB dB dB dBm dBm dB mA V
1. For reliable operation, the junction temperature should not exceed 150C.
MMG3012NT1 2 RF Device Data Freescale Semiconductor
Table 5. Functional Pin Description
Pin Number 1 2 3 RFin Ground RFout/DC Supply 1 2 3 Pin Function 2
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD 22 - A114) Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit C
MMG3012NT1 RF Device Data Freescale Semiconductor 3
50 OHM TYPICAL CHARACTERISTICS
25 Gp, SMALL-SIGNAL GAIN (dB) 0
TC = 85C 20 - 40C
25C S11, S22 (dB)
-10
S22 S11
-20
15
-30 VCC = 5 Vdc 0 1 2 f, FREQUENCY (GHz) 3 4 VCC = 5 Vdc ICC = 70 mA -40 0 1 2 f, FREQUENCY (GHz) 3 4
10
Figure 2. Small - Signal Gain (S21) versus Frequency
Figure 3. Input/Output Return Loss versus Frequency
21 19 17 15 2600 MHz 13 3500 MHz 11 9 7 10 12 14 16 18 20 Pout, OUTPUT POWER (dBm) VCC = 5 Vdc ICC = 70 mA 900 MHz 2140 MHz P1dB, 1 dB COMPRESSION POINT (dBm)
20 19 18 17 16 15 14 13 0.5 1 1.5 2 2.5 3 3.5 f, FREQUENCY (GHz) VCC = 5 Vdc ICC = 70 mA
Gp, SMALL-SIGNAL GAIN (dB)
1960 MHz
Figure 4. Small - Signal Gain versus Output Power
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 100 ICC, COLLECTOR CURRENT (mA) 36
Figure 5. P1dB versus Frequency
80
33
60
30
40
27 VCC = 5 Vdc ICC = 70 mA 1 MHz Tone Spacing 0 1 2 f, FREQUENCY (GHz) 3 4
20
24
0 4 4.2 4.4 4.6 4.8 5 5.2 5.4 VCC, COLLECTOR VOLTAGE (V)
21
Figure 6. Collector Current versus Collector Voltage
Figure 7. Third Order Output Intercept Point versus Frequency
MMG3012NT1 4 RF Device Data Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 36 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 35 34 33 32 31 30 29 28 -40 VCC = 5 Vdc f = 900 MHz 1 MHz Tone Spacing -20 0 20 40 60 80 100
33
30
27
24 f = 900 MHz 1 MHz Tone Spacing 21 4.9 4.95 5 5.05 5.1 VCC, COLLECTOR VOLTAGE (V)
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point versus Collector Voltage
Figure 9. Third Order Output Intercept Point versus Case Temperature
-30 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -40 MTTF (YEARS) VCC = 5 Vdc ICC = 70 mA f = 900 MHz 1 MHz Tone Spacing
105
-50
104
-60
-70
-80 0 3 6 9 12 15 Pout, OUTPUT POWER (dBm)
103 120 125 130 135 140 145 150 TJ, JUNCTION TEMPERATURE (C) NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 70 mA
Figure 10. Third Order Intermodulation versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 11. MTTF versus Junction Temperature
8
-20 VCC = 5 Vdc ICC = 70 mA f = 2140 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
NF, NOISE FIGURE (dB)
6
-30
-40
4
-50
2 VCC = 5 Vdc ICC = 70 mA 0 0 1 2 f, FREQUENCY (GHz) 3 4
-60
-70 2 4 6 8 10 12 14 16 Pout, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power MMG3012NT1
RF Device Data Freescale Semiconductor
5
50 OHM APPLICATION CIRCUIT: 40- 300 MHz
VSUPPLY
R1
C3 L1 RF INPUT DUT
C4
Z1 C1
Z2
Z3
Z4 C2 Z4 PCB
Z5
RF OUTPUT
VCC
Z1, Z5 Z2 Z3
0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip
0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 14. 50 Ohm Test Circuit Schematic
30 20 10 S21, S11, S22 (dB) 0 -10 -20 -30 S11 -40 0 100 200 300 400 500 f, FREQUENCY (MHz) MMG30XX Rev 2 S22 VCC = 5 Vdc ICC = 70 mA C1 C4 C3 L1 C2 S21 R1
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2, C3 C4 L1 R1 Description 0.01 F Chip Capacitors 1000 pF Chip Capacitor 470 nH Chip Inductor 0 W Chip Resistor Part Number C0603C103J5RAC C0603C102J5RAC BK2125HM471 - T ERJ3GEY0R00V Manufacturer Kemet Kemet Taiyo Yuden Panasonic
MMG3012NT1 6 RF Device Data Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 300 - 3600 MHz
VSUPPLY
R1
C3 L1 RF INPUT DUT
C4
Z1 C1
Z2
Z3
Z4 C2 Z4 PCB
Z5
RF OUTPUT
VCC
Z1, Z5 Z2 Z3
0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip
0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 17. 50 Ohm Test Circuit Schematic
30 20 S21, S11, S22 (dB) 10 0 C1 -10 -20 -30 300 VCC = 5 Vdc ICC = 70 mA 800 1300 1800 S22 L1 C2 S21
R1 C4 C3
S11 2300 2800 3300 3800
MMG30XX Rev 2
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2 C3 C4 L1 R1 Description 150 pF Chip Capacitors 0.01 F Chip Capacitor 1000 pF Chip Capacitor 56 nH Chip Inductor 0 W Chip Resistor Part Number C0603C151J5RAC C0603C103J5RAC C0603C102J5RAC HK160856NJ - T ERJ3GEY0R00V Manufacturer Kemet Kemet Kemet Taiyo Yuden Panasonic
MMG3012NT1 RF Device Data Freescale Semiconductor 7
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 70 mA, TC = 25C, 50 Ohm System)
f MHz 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 S11 |S11| 0.09174 0.09324 0.09550 0.09721 0.09703 0.09452 0.09430 0.09343 0.09237 0.09271 0.09245 0.09228 0.09283 0.09352 0.09460 0.09591 0.09731 0.09918 0.10165 0.10456 0.10530 0.10595 0.10816 0.11046 0.11249 0.11403 0.11488 0.11602 0.11686 0.11834 0.12187 0.12645 0.13047 0.13472 0.13990 0.14563 0.15160 0.15702 0.16308 0.16757 0.17315 0.17857 0.18449 0.18892 174.872 173.141 172.602 171.41 170.357 169.626 168.366 167.117 166.034 164.864 163.824 162.689 161.228 159.955 158.511 157.224 155.828 154.356 153.21 151.519 150.349 149.493 148.216 147.031 145.868 144.558 143.211 142.244 136.948 134.929 132.851 130.925 129.243 127.648 126.06 124.504 122.941 121.556 120.247 118.779 117.547 116.463 115.174 113.697 |S21| 10.24140 10.19244 10.14549 10.09679 10.03727 9.99063 9.92113 9.84672 9.77362 9.68901 9.60244 9.51098 9.41347 9.31713 9.21226 9.10650 9.00381 8.89589 8.79066 8.67809 8.55853 8.43942 8.32401 8.21004 8.10074 7.98739 7.87293 7.75891 7.66911 7.55873 7.45808 7.35252 7.26057 7.16564 7.06852 6.96617 6.86978 6.77908 6.68747 6.60108 6.51391 6.42737 6.33611 6.24887 S21 174.57 171.29 168.278 165.627 162.828 159.887 157.15 154.424 151.64 148.973 146.3 143.642 141.059 138.481 135.934 133.403 130.913 128.468 126.065 123.674 121.296 118.934 116.631 114.349 112.14 109.93 107.781 105.625 103.599 101.565 99.538 97.533 95.548 93.586 91.625 89.685 87.806 85.927 84.024 82.171 80.255 78.424 76.56 74.732 |S12| 0.07096 0.07214 0.07255 0.07316 0.07333 0.07362 0.07387 0.07402 0.07435 0.07457 0.07487 0.07531 0.07577 0.07608 0.07652 0.07698 0.07747 0.07786 0.07831 0.07892 0.07939 0.07997 0.08032 0.08086 0.08142 0.08202 0.08247 0.08302 0.08384 0.08447 0.08501 0.08565 0.08616 0.08673 0.08733 0.08792 0.08860 0.08917 0.08980 0.09037 0.09093 0.09154 0.09210 0.09280 S12 0.256 - 0.171 - 0.477 - 0.245 - 0.227 - 0.511 - 0.509 - 0.582 - 0.77 - 0.953 - 0.984 - 1.158 - 1.362 - 1.566 - 1.748 - 1.988 - 2.17 - 2.552 - 2.748 - 3.106 - 3.413 - 3.734 - 4.033 - 4.47 - 4.792 - 5.279 - 5.657 - 6.021 - 6.437 - 6.947 - 7.329 - 7.818 - 8.268 - 8.83 - 9.205 - 9.856 - 10.316 - 10.882 - 11.465 - 12.048 - 12.637 - 13.316 - 13.944 - 14.673 |S22| 0.02426 0.03097 0.03654 0.04935 0.06092 0.06932 0.08063 0.09043 0.09911 0.10788 0.11655 0.12425 0.13246 0.13942 0.14612 0.15280 0.15946 0.16560 0.17180 0.17724 0.18362 0.18945 0.19501 0.20058 0.20635 0.21190 0.21733 0.22271 0.23416 0.23853 0.24236 0.24526 0.24807 0.25113 0.25379 0.25623 0.25716 0.25848 0.25937 0.26021 0.26130 0.26314 0.26471 0.26627 S22 - 90.895 - 92.768 - 94.818 - 96.31 - 98.961 - 101.516 - 104.01 - 106.263 - 108.791 - 111.052 - 113.69 - 116.435 - 119.102 - 121.839 - 124.764 - 127.579 - 130.497 - 133.648 - 136.717 - 139.644 - 142.827 - 146.154 - 149.409 - 152.438 - 155.584 - 158.664 - 161.631 - 164.745 - 166.394 - 169.432 - 172.577 - 175.475 - 178.453 178.712 175.901 173.194 170.619 168.384 166.234 164.169 162.354 160.699 159.323 157.768 (continued)
MMG3012NT1 8 RF Device Data Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 70 mA, TC = 25C, 50 Ohm System) (continued)
f MHz 2300 2350 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 3550 3600 S11 |S11| 0.19385 0.19754 0.20084 0.20423 0.20717 0.20983 0.21214 0.21446 0.21638 0.21837 0.22001 0.22117 0.22351 0.22552 0.22752 0.23097 0.23369 0.23656 0.23989 0.24360 0.24688 0.25052 0.25455 0.25901 0.26341 0.26813 0.27237 112.219 110.678 109.125 107.523 105.937 104.482 102.92 101.252 99.767 98.143 96.523 95.017 93.331 91.634 90.219 88.535 87.054 85.789 84.265 82.93 81.534 80.161 78.818 77.562 76.264 74.959 73.713 |S21| 6.16340 6.07930 5.99646 5.91022 5.82783 5.75180 5.67379 5.59418 5.51853 5.44472 5.37675 5.30584 5.24121 5.17536 5.11494 5.05825 4.99713 4.94222 4.88930 4.83457 4.78423 4.73023 4.68010 4.63102 4.58330 4.53327 4.48601 S21 72.929 71.134 69.327 67.546 65.858 64.078 62.378 60.667 58.949 57.276 55.629 53.932 52.348 50.712 49.089 47.462 45.82 44.188 42.551 40.954 39.327 37.654 36.023 34.476 32.823 31.168 29.586 |S12| 0.09326 0.09383 0.09424 0.09462 0.09514 0.09561 0.09610 0.09647 0.09688 0.09737 0.09779 0.09840 0.09877 0.09912 0.09981 0.10036 0.10085 0.10141 0.10188 0.10239 0.10292 0.10350 0.10402 0.10446 0.10504 0.10524 0.10576 S12 - 15.366 - 16.084 - 16.717 - 17.459 - 18.149 - 18.867 - 19.566 - 20.335 - 21.012 - 21.79 - 22.573 - 23.199 - 24.027 - 24.843 - 25.546 - 26.365 - 27.171 - 27.968 - 28.842 - 29.629 - 30.452 - 31.434 - 32.349 - 33.239 - 34.166 - 35.066 - 36.008 |S22| 0.26829 0.27135 0.27492 0.27881 0.28300 0.28750 0.29276 0.29839 0.30389 0.30941 0.31537 0.32118 0.32764 0.33369 0.34034 0.34528 0.35126 0.35690 0.36188 0.36735 0.37180 0.37649 0.38152 0.38553 0.39006 0.39457 0.39878 S22 156.541 155.373 154.124 153.075 151.824 150.28 148.947 147.403 145.776 143.933 142.001 140.215 138.273 136.168 134.188 132.091 129.624 127.421 125.127 122.986 120.634 118.449 116.317 114.07 112.169 110.035 107.887
MMG3012NT1 RF Device Data Freescale Semiconductor 9
1.7 7.62 0.305 diameter
3.48 5.33 1.27 1.27 0.86 0.64 3.86 0.58
2.49
2.54
Recommended Solder Stencil
NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH.
Figure 20. Recommended Mounting Configuration
MMG3012NT1 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MMG3012NT1 RF Device Data Freescale Semiconductor 11
MMG3012NT1 12 RF Device Data Freescale Semiconductor
MMG3012NT1 RF Device Data Freescale Semiconductor 13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3100: General Purpose Amplifier Biasing
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 3 4 5 Date Mar. 2007 July 2007 Mar. 2008 * * Description Corrected and updated Part Numbers in Tables 8 and 9, Component Designations and Values, to RoHS compliant part numbers, p. 6, 7 Replaced Case Outline 1514 - 01 with 1514 - 02, Issue D, p. 1, 11 - 13. Case updated to add missing dimension for Pin 1 and Pin 3.
* Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 * Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 5
* Corrected S - Parameter table frequency column label to read "MHz" versus "GHz" and corrected frequency values from GHz to MHz, p. 8, 9
MMG3012NT1 14 RF Device Data Freescale Semiconductor
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MMG3012NT1
Document Number: RF Device Data MMG3012NT1 Rev. 5, 3/2008 Freescale Semiconductor
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